 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BF485PN NPN/PNP high voltage transistors Product specification 2000 Aug 02 Philips Semiconductors Product specification NPN/PNP high voltage transistors FEATURES * High voltage (max. 350 V) * Low current (max. 200 mA) * High power dissipation (600 mW) * Two independently working transistors. APPLICATIONS * Complementary high-voltage configurations * Hook switch in telephone applications. DESCRIPTION NPN/PNP transistors in a SOT457 (SC-74) plastic package. MARKING CODE TYPE NUMBER BF485PN CODE HS 1 Top view 2 3 6 handbook, halfpage 5 4 6 BF485PN PINNING PIN 1 and 4 5 and 2 6 and 3 DESCRIPTION emitter TR1; TR2 base TR1; TR2 collector TR1; TR2 5 4 TR1 TR2 1 2 3 MAM439 Fig.1 Simplified outline (SOT457) and symbol LIMITING VALUES In accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. - - - - - Tamb 25 C; note 1 - -65 - -65 Tamb 25 C; note 1 - MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature range open emitter open base open collector 350 350 6 100 200 600 +150 150 +150 V V V mA mA mW C C C 2000 Aug 02 2 Philips Semiconductors Product specification NPN/PNP high voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER from junction to ambient CONDITIONS in free air; note 1 BF485PN VALUE 208 UNIT K/W 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - 60 50 - - - 50 MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO IEBO hFE VCEsat VBEsat Cc fT collector-base cut-off current emitter-base cut-off current DC current gain saturation voltage saturation voltage collector capacitance transition frequency IE = 0; VCB = 300 V; IE = 0; VCB = 250 V; Tj = 150 C IC = 0; VEB = 5 V IC = 1 mA; VCE = 10 V IC = 30 mA; VCE = 10 V IC = 20 mA; IB = 2 mA IC = 20 mA; IB = 2 mA IE = Ie = 0; VCB = 20 V; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz 50 50 100 - - 250 850 6 - mV mV pF MHz nA A nA handbook, halfpage 300 MLD391 handbook, halfpage (6) 200 MLD392 (5) (4) (3) (2) (1) hFE (1) IC (mA) 150 (7) (8) 200 (2) 100 (9) (10) 100 (3) 50 0 10-1 1 10 IC (mA) 102 0 0 TR1 (NPN). 2 4 6 8 10 VCE (V) TR1 (NPN); VCE = 10 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. (1) (2) (3) (4) IB = 30 mA. IB = 27 mA. IB = 24 mA. IB = 21 mA. (5) IB = 18 mA. (6) IB = 15 mA. (7) IB = 12 mA. (8) IB = 9 mA. (9) IB = 6 mA. (10) IB = 3 mA. Fig.2 DC current gain as a function of collector current: typical values. Fig.3 Collector current as a function of collector-emitter voltage; typical values. 2000 Aug 02 3 Philips Semiconductors Product specification NPN/PNP high voltage transistors BF485PN MLD393 handbook, halfpage 1000 VBE handbook, halfpage (1) (2) 1000 MLD394 (mV) 800 VBEsat (mV) 800 (2) (1) 600 (3) 600 400 (3) 400 200 0 10-1 TR1 (NPN); VCE = 10 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. 1 10 IC (mA) 102 200 10-1 1 10 IC (mA) 102 TR1 (NPN); IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Base-emitter voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current. 103 handbook, halfpage MLD395 handbook, halfpage 300 MLD396 VCEsat (mV) hFE (1) 200 (1) 102 (2) (2) (3) 100 (3) 10 10-1 1 10 IC (mA) 102 0 -10-1 -1 -10 IC (mA) -102 TR1 (NPN); IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR2 (PNP); VCE = -10 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.6 Collector-emitter saturation voltage as a function of collector current: typical values. Fig.7 DC current gain as a function of collector current: typical values. 2000 Aug 02 4 Philips Semiconductors Product specification NPN/PNP high voltage transistors BF485PN handbook, halfpage (6) -200 IC (mA) MLD397 (5) (4) (3) (2) (1) handbook, halfpage -1000 VBE (mV) MLD398 (1) -150 (7) (8) -800 (2) -600 (3) -100 (9) (10) -400 -50 -200 0 0 TR2 (PNP). (1) IB = -50 mA. (2) IB = -45 mA. (3) IB = -40 mA. (4) IB = -35 mA. -2 -4 -6 -8 -10 VCE (V) 0 -10-1 -1 -10 IC (mA) -102 (5) IB = -30 mA. (6) IB = -25 mA. (7) IB = -20 mA. (8) IB = -15 mA. (9) IB = -10 mA. (10) IB = -5 mA. TR2 (PNP); VCE = -10 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 Collector current as a function of collector-emitter voltage; typical values. Fig.9 Base-emitter voltage as a function of collector current; typical values. handbook, halfpage -1000 (mV) -800 MLD399 -103 handbook, halfpage MLD400 VBEsat (1) VCEsat (mV) (2) (1) -600 -102 (2) (3) (3) -400 -200 -10-1 -1 -10 IC (mA) -102 -10 -10-1 -1 -10 IC (mA) -102 TR2 (PNP); IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. TR2 (PNP); IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.10 Base-emitter saturation voltage as a function of collector current. Fig.11 Collector-emitter saturation voltage as a function of collector current: typical values. 2000 Aug 02 5 Philips Semiconductors Product specification NPN/PNP high voltage transistors PACKAGE OUTLINE Plastic surface mounted package; 6 leads BF485PN SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2000 Aug 02 6 Philips Semiconductors Product specification NPN/PNP high voltage transistors DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) BF485PN This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2000 Aug 02 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000 Internet: http://www.semiconductors.philips.com SCA 70 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/550/01/pp8 Date of release: 2000 Aug 02 Document order number: 9397 750 07289 |
Price & Availability of BF485PN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |